102 транзистор или что

Наименование производителя: C102

Максимальная рассеиваемая мощность (Pc): 0.25 W

Макcимально допустимое напряжение коллектор-база (Ucb): 30 V

Макcимальный постоянный ток коллектора (Ic): 0.05 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 0.8 MHz

Ёмкость коллекторного перехода (Cc): 50 pf

Статический коэффициент передачи тока (hfe): 13

C102 Datasheet (PDF)

DMC1028UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max Device BVDSS RDS(ON) max TA = +25C Low Input Capacitance 25m @ VGS = 4.5V 6.0A Low Profile, 0.6mm Max Height Q1 12V 30m @ VGS = 3.3V 5.5A ESD HBM Protected up to 1.5KV, MM Protected up to 150V. N-Channel 32m @ VGS = 2.5V 5.3A Totally Lea

DMC1029UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max TA = +25 Low Input Capacitance C 29m @ VGS = 4.5V 5.6A Low Profile, 0.6mm Max Height Q1 34m @ VGS = 2.5V 5.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V N-Channel 44m @ VGS = 1.8V 4.5A Haloge

0.3. 2sc1027.pdf Size:160K _jmnic

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC1027 DESCRIPTION With TO-3 package High power dissipation Low collector saturation voltage APPLICATIONS Switching regulators DC-DC convertor General purpose power amplifiers PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute

SEMICONDUCTOR KTC1020TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. BFEATURES Excellecnt hFE Linearity: hFE(2)=25Min. : VCE=6V, IC=400mA.DIM MILLIMETERSOA 3.20 MAX 1 Watt Amplifier Application.HM B 4.30 MAXC 0.55 MAX Complementary to KTA1021. _D 2.40 + 0.15E 1.27F 2.30C_+G 14.00 0.50H 0.60 MAXJ

SEMICONDUCTOR KTC1026TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE APPLICATION. COLOR TV CLASS B SOUND OUTPUT APPLICATION.B DFEATURES High Voltage : VCEO=180V.DIM MILLIMETERSP High DC Current Gain.DEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MAXKF 1.27G 1.70 MAXMAXIMUM RATINGS (Ta=25 )H 0.55 MAXFF_J 14.00 + 0.50CHAR

SEMICONDUCTOR KTC1027TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION. B DFEATURE Complementary to KTA1023.DIM MILLIMETERSPDEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSMAXIMUM RATING (Ta=25 )D 2.50 MAXQE 1.15 MAXKCHA RACTERISTIC SYMBOL RATING UNITF 1.27G 1.70 MAXVCBOCollector-Base Voltage 120 VH 0.55 MAXFF_J 14.00 + 0.50V

0.7. ktc1027.pdf Size:45K _wietron

0.8. ftc1027.pdf Size:329K _first_silicon

SEMICONDUCTORFTA1027TECHNICAL DATAFTC1027 TRANSISTOR (NPN) BFEATURES Complementary to FTA1023 High Voltage Applications EDIM MILLIMETERSA 8.2 MAXDMAXIMUM RATINGS (Ta=25 unless otherwise noted) B 5.1 MAXC 1.58 MAXD 0.55 MAXE 0.7 TYP F 1.27 TYPG 2.54 TYPFH 14.20 MAX MAXIMUM RATINGS (Ta=25 unless otherwise noted) GJ 0.45 MAX L 4.10 MAX Symbol

0.9. ktc1020.pdf Size:1002K _kexin

0.11. 2sc1024.pdf Size:181K _inchange_semiconductor

0.12. 2sc1027.pdf Size:208K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC1027DESCRIPTIONWith TO-3 packageHigh power dissipationLow collector saturation voltagMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC convertorGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-

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102 транзистор или что

Наименование производителя: F102

Максимальная рассеиваемая мощность (Pc): 85 W

Макcимально допустимое напряжение коллектор-база (Ucb): 60 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V

Макcимальный постоянный ток коллектора (Ic): 4 A

Предельная температура PN-перехода (Tj): 175 °C

Граничная частота коэффициента передачи тока (ft): 1 MHz

Статический коэффициент передачи тока (hfe): 10

F102 Datasheet (PDF)

0.1. mrf1029r.pdf Size:55K _motorola

0.2. mpf102rev0d.pdf Size:270K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPF102/DJFET VHF AmplifierN Channel DepletionMPF1021 DRAIN3GATE2 SOURCEMAXIMUM RATINGSRating Symbol Value UnitDra

October 2012FDP075N15A_F102 / FDB075N15AN-Channel PowerTrench MOSFET 150V, 130A, 7.5mFeatures Description RDS(on) = 6.25m ( Typ.)@ VGS = 10V, This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Fast Switching been especially tailored to minimize the on-state resistance and yet maintain superior switc

0.4. fdp150n10a f102.pdf Size:317K _fairchild_semi

July 2011FDP150N10A_F102tmN-Channel PowerTrench MOSFET 100V, 50A, 15mFeatures Description RDS(on) = 12.5m ( Typ.)@ VGS = 10V, This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching performa

0.5. fcp25n60n f102.pdf Size:455K _fairchild_semi

March 2013FCP25N60N_F102N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mFeatures Description RDS(on) = 107 m (Typ.)@ VGS = 10 V, AThe SupreMOS MOSFET is Fairchild Semiconductors next-generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 57 nC)employing a deep trench filling process that differentiate it from

0.6. fdp030n06b f102.pdf Size:641K _fairchild_semi

November 2013FDP030N06B_F102N-Channel PowerTrench MOSFET60 V, 195 A, 3.1 mFeatures Description RDS(on) = 2.67 m (Typ.) @ VGS = 10 V, A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Low FOM RDS(on) * QGlored to minimize the on-state resistance while maintainingsuperior switching perfor

July 2011FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5mFeatures Description RDS(on) = 3.8m ( Typ.)@ VGS = 10V, This N-Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superio

0.8. fdp085n10a f102.pdf Size:320K _fairchild_semi

May 2011FDP085N10A_F102N-Channel PowerTrench MOSFET 100V, 96A, 8.5mFeatures General Description RDS(on) = 7.35m ( Typ.)@ VGS = 10V, This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching perf

0.9. fci25n60n f102.pdf Size:421K _fairchild_semi

June 2010 TMSupreMOSFCI25N60N_F102tmN-Channel MOSFET 600V, 25A, 0.125Features Description RDS(on) = 0.107 ( Typ.)@ VGS = 10V, The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 57nC)process that differentiates it from preceding multi-epi based tech-

0.10. fdp020n06b f102.pdf Size:658K _fairchild_semi

January 2012FDP020N06B_F102N-Channel PowerTrench MOSFET 60V, 313A, 2mFeatures Description RDS(on) = 1.65m ( Typ.) at VGS = 10V, This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tailored Low FOM RDS(on) *QGto minimize the on-state resistance while maintaining superior switching performance

0.11. fdp083n15a f102.pdf Size:399K _fairchild_semi

March 2013FDP083N15A _F102 N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 mFeatures Description RDS(on) = 6.85 m ( Typ.)@ VGS = 10 V, A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Fast Switching Speedbeen tailored to minimize the on-state resistance while maintain-ing superior switching perfo

0.12. fcp190n60 gf102.pdf Size:657K _fairchild_semi

December 2013FCP190N60_GF102N-Channel SuperFET II MOSFET600 V, 20.2 A, 199 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 170 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 57 nC)

0.13. mpf102.pdf Size:26K _fairchild_semi

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

0.16. mpf102.pdf Size:146K _onsemi

0.17. ssf1020d.pdf Size:685K _silikron

SSF1020D Main Product Characteristics: VDSS 100V RDS(on) 16m(typ.) ID 60A DPAK Ma rk in g an d pi n Sc h ema t ic diag r am Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body re

0.18. ssf1020.pdf Size:458K _silikron

SSF1020 Feathers: Advanced trench process technology BV=100V Ultra low Rdson, typical 16mohm Rdson=16mTyp. High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1020 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology i

0.19. ssf1020a.pdf Size:453K _silikron

SSF1020A Feathers: Advanced trench process technology BV=100V Ultra low Rdson, typical 16mohm Rdson=20mmax. High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1020A is a new generation of middle voltage and high current NChannel enhancement mode trench power SSF1020A TOP View (D2PAK) MOSFET. This ne

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102 транзистор или что

Наименование производителя: 2SA102

Максимальная рассеиваемая мощность (Pc): 0.06 W

Макcимально допустимое напряжение коллектор-база (Ucb): 40 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 1 V

Макcимальный постоянный ток коллектора (Ic): 0.01 A

Предельная температура PN-перехода (Tj): 75 °C

Граничная частота коэффициента передачи тока (ft): 15 MHz

Ёмкость коллекторного перехода (Cc): 6 pf

Статический коэффициент передачи тока (hfe): 40

2SA102 Datasheet (PDF)

0.1. 2sa1020.pdf Size:167K _toshiba

0.8. 2sa1022.pdf Size:38K _panasonic

Transistor2SA1022Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC2295+0.22.8 0.3+0.25Features0.65 0.15 1.5 0.05 0.65 0.15High transition frequency fT.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute Maximum Ratings

0.9. 2sa1022 e.pdf Size:38K _panasonic

Transistor2SA1022Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC2295+0.22.8 0.3+0.25Features0.65 0.15 1.5 0.05 0.65 0.15High transition frequency fT.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute Maximum Ratings

0.10. 2sa1020.pdf Size:634K _utc

UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. FEATURES *Low collector saturation voltage: VCE(SAT)=-0.5V(MAX) (IC=-1A) *High speed switching time: tSTG=1.0s(TYP) *Complement to UTC 2SC2655 ORDERING INFORMATION Ord

2SA1025, 2SA1081, 2SA1082Silicon PNP EpitaxialApplication Low frequency amplifier Complementary pair with 2SC2396, 2SC2543 and 2SC2544OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1025, 2SA1081, 2SA1082Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1025 2SA1081 2SA1082 UnitCollector to base voltage VCBO 60 90 120 VCollector to emitter

2SA1029, 2SA1030Silicon PNP EpitaxialApplication Low frequency amplifier Complementary pair with 2SC458 and 2SC2308OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1029, 2SA1030Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1029 2SA1030 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmitter to base

0.13. 2sa1020.pdf Size:421K _secos

0.14. 2sa1021.pdf Size:146K _jmnic

JMnic Product Specification Silicon PNP Power Transistors 2SA1021 DESCRIPTION With TO-126 package High breakdown voltage Large current capacity APPLICATIONS For color TV sound output;converters Inverters applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITI

0.16. 2sa1020.pdf Size:237K _lge

0.17. 2sa1020.pdf Size:429K _wietron

0.18. 2sa1022.pdf Size:700K _kexin

0.19. 2sa1020.pdf Size:1105K _kexin

0.20. 2sa1020gp.pdf Size:117K _chenmko

0.21. 2sa1020i.pdf Size:232K _foshan

0.22. 2sa1021.pdf Size:199K _inchange_semiconductor

0.23. 2sa1028.pdf Size:195K _inchange_semiconductor

Источник

Параметры транзистора C102. Интернет-справочник основных параметров транзисторов.

Высказывания:
Не тот догонит, кто бежит, а тот, кому суждено. /Казахская пословица/

Основные параметры транзистора C102 биполярного низкочастотного pnp.

Исходный полупроводниковый материал, на основе которого изготовлен транзистор: кремний (Si)
Структура полупроводникового перехода: pnp

Производитель: TELEDYNE
Сфера применения: Low Power, General Purpose
Популярность: 15215
Условные обозначения описаны на странице «Теория».

Схемы транзистора C102

Общий вид транзистора C102.	Цоколевка транзистора C102.

Коллективный разум. Дополнения для транзистора C102.

Другие разделы справочника:

Есть надежда, что справочник транзисторов окажется полезен опытным и начинающим радиолюбителям, конструкторам и учащимся. Всем тем, кто так или иначе сталкивается с необходимостью узнать больше о параметрах транзисторов. Более подробную информацию обо всех возможностях этого интернет-справочника можно прочитать на странице «О сайте».
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Спасибо за терпение и сотрудничество.

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